Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 4.24mJ (on), 2.17mJ (off)
Td (on/off) @ 25°C 50ns/200ns
Current - Collector Pulsed (Icm) 225A
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Test Condition 400V, 75A, 10 Ω, 15V
Power Dissipation-Max (Abs) 454W
Current - Collector (Ic) (Max) 140A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 240ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ