Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 115μJ (on), 600μJ (off)
Td (on/off) @ 25°C 41ns/104ns
Current - Collector Pulsed (Icm) 72A
Turn Off Time-Nom (toff) 164 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A
Test Condition 400V, 24A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.95V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 89ns
Max Collector Current 48A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 104 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ