AUIRGP35B60PD-E
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 308W TO247AD
PDF
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Buying Options
Total Price: USD $2.25
Unit Price: USD $2.248998
≥1 USD $2.248998
≥200 USD $0.870453
≥500 USD $0.840256
≥1000 USD $0.824501
Inventory: 2651
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 308W
Number of Elements 1
Rise Time-Max 11 ns
Element Configuration Single
Power Dissipation 308W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.55V
Max Collector Current 60A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.15V
Turn On Time 34 ns
Test Condition 390V, 22A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
Turn Off Time-Nom (toff) 142 ns
IGBT Type NPT
Gate Charge 55nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 26ns/110ns
Switching Energy 220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 16 ns
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.31mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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