Operating Temperature -55°C~150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.7V
Max Collector Current 57A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Test Condition 960V, 33A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Turn Off Time-Nom (toff) 2170 ns
Current - Collector Pulsed (Icm) 114A
Td (on/off) @ 25°C 32ns/845ns
Switching Energy 1.8mJ (on), 19.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V