Gate-Emitter Thr Voltage-Max 6V
Gate-Emitter Voltage-Max 20V
Switching Energy 160μJ (on), 200μJ (off)
Td (on/off) @ 25°C 17ns/78ns
Current - Collector Pulsed (Icm) 92A
Turn Off Time-Nom (toff) 320 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Test Condition 480V, 12A, 23 Ω, 15V
Collector Emitter Saturation Voltage 2.52V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 23A
Collector Emitter Voltage (VCEO) 2.1V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ