Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 188 ns
Collector Emitter Saturation Voltage 1.85V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 120 ns
Max Collector Current 76A
Collector Emitter Voltage (VCEO) 1.85V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Power Dissipation-Max 268W
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Terminal Finish MATTE TIN OVER NICKEL