GA35XCP12-247
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT Transistors 1200V 35A SIC IGBT CoPak
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 6.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.66mJ (on), 4.35mJ (off)
Current - Collector Pulsed (Icm) 35A
Gate Charge 50nC
IGBT Type PT
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 35A
Test Condition 800V, 35A, 22 Ω, 15V
Collector Emitter Saturation Voltage 3V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Reverse Recovery Time 36 ns
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Input Type Standard
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature -40°C~150°C TJ
Physical
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 18 Weeks
Alternative Model
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