Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 31.2W
Element Configuration Single
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 14A
Reverse Recovery Time 98 ns
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 5A, 60 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 5A
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 12ns/83ns
Switching Energy 140μJ (on), 40μJ (off)
Gate-Emitter Voltage-Max 20V