Gate-Emitter Voltage-Max 20V
Switching Energy 260μJ (on), 70μJ (off)
Td (on/off) @ 25°C 10ns/72ns
Current - Collector Pulsed (Icm) 40A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 10A
Test Condition 400V, 10A, 30 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 105 ns
Max Collector Current 20A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Max Power Dissipation 42W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ