Gate-Emitter Voltage-Max 20V
Switching Energy 420μJ (on), 110μJ (off)
Td (on/off) @ 25°C 21ns/73ns
Current - Collector Pulsed (Icm) 60A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 15A
Test Condition 400V, 15A, 20 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 196 ns
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 167W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ