Gate-Emitter Voltage-Max 20V
Switching Energy 3.1mJ (on), 730μJ (off)
Td (on/off) @ 25°C 32ns/74ns
Current - Collector Pulsed (Icm) 210A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 60A
Test Condition 400V, 60A, 5 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 137 ns
Max Collector Current 120A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 417W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ