Gate-Emitter Voltage-Max 20V
Switching Energy 2.37mJ (on), 500μJ (off)
Td (on/off) @ 25°C 26ns/68ns
Current - Collector Pulsed (Icm) 168A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 50A
Test Condition 400V, 50A, 6 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 132 ns
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Max Power Dissipation 312W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ