Gate-Emitter Voltage-Max 20V
Switching Energy 1.55mJ (on), 300μJ (off)
Td (on/off) @ 25°C 29ns/74ns
Current - Collector Pulsed (Icm) 140A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Test Condition 400V, 40A, 7.5 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 127 ns
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Max Power Dissipation 278W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ