Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 208W
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 70 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 120 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.85V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 26A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 60A
Current - Collector Pulsed (Icm) 96A
Td (on/off) @ 25°C 20ns/58ns
Switching Energy 1.1mJ (on), 240μJ (off)
Gate-Emitter Voltage-Max 20V