Gate-Emitter Voltage-Max 20V
Switching Energy 760μJ (on), 180μJ (off)
Td (on/off) @ 25°C 20ns/66ns
Current - Collector Pulsed (Icm) 74A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A
Test Condition 400V, 20A, 15 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 107 ns
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 2.4V
Polarity/Channel Type N-CHANNEL
Element Configuration Single
Max Power Dissipation 167W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ