Operating Temperature 150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish NICKEL (197)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.119kW
Configuration Half Bridge
Collector Emitter Voltage (VCEO) 2.15V
Max Collector Current 600A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 400A
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 28.8nF @ 25V