VS-GB200TH120N
RoHS 
RoHS compliant
RoHS compliantPackage Double INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT 1200V 360A 1136W INT-A-PAK
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Input Capacitance (Cies) @ Vce 14.9nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 200A
Input Capacitance 14.9nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 5mA
Max Collector Current 360A
Collector Emitter Voltage (VCEO) 2.35V
Input Standard
Power - Max 1136W
Configuration Half Bridge
Number of Elements 1
Max Power Dissipation 1.136kW
Subcategory Insulated Gate BIP Transistors
Terminal Finish Nickel (Ni)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2015
Operating Temperature 150°C TJ
Physical
Package / Case Double INT-A-PAK (3 + 4)
Mounting Type Chassis Mount
Mount Chassis Mount
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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