VS-GB100TH120N
RoHS 
RoHS compliant
RoHS compliantPackage Double INT-A-PAK (3 + 4)
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT 1200V 200A 833W INT-A-PAK
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Double INT-A-PAK (3 + 4)
Technical
Operating Temperature 150°C TJ
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 833W
Number of Elements 1
Configuration Half Bridge
Power - Max 833W
Input Standard
Collector Emitter Voltage (VCEO) 2.35V
Max Collector Current 200A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 8.58nF
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 8.58nF @ 25V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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