Input Capacitance (Cies) @ Vce 9.5nF @ 30V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 312 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Collector Emitter Saturation Voltage 2.73V
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 100μA
Max Collector Current 88A
Collector Emitter Voltage (VCEO) 2.1V
Transistor Application POWER CONTROL
Configuration Three Level Inverter
Max Power Dissipation 338W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ