A2C35S12M3
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 35A 250W ACEPACK2
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Inventory: 3955
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Technical Details
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 35
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number A2C35S12
JESD-30 Code R-XUFM-X35
Number of Elements 6
Configuration Three Phase Inverter with Brake
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Current - Collector Cutoff (Max) 100μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 35A
Power Dissipation-Max (Abs) 250W
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 35A
Turn Off Time-Nom (toff) 364 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2154pF @ 25V
VCEsat-Max 2.45 V
Gate-Emitter Thr Voltage-Max 7V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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