A2C25S12M3
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 25A 197W ACEPACK2
PDF
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Buying Options
Total Price: USD $84.8
Unit Price: USD $84.8
≥1 USD $84.8
≥10 USD $80
≥100 USD $75.4717
≥500 USD $71.19972
≥1000 USD $67.16954
≥3000 USD $63.36749
Inventory: 35
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 7V
VCEsat-Max 2.45 V
Input Capacitance (Cies) @ Vce 1550pF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 338 ns
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 25A
Turn On Time 125.2 ns
Power Dissipation-Max (Abs) 197W
Current - Collector (Ic) (Max) 25A
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector Cutoff (Max) 100μA
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 197W
Configuration Three Phase Inverter with Brake
Number of Elements 6
JESD-30 Code R-XUFM-X35
Base Part Number A2C25S12
Terminal Form UNSPECIFIED
Terminal Position UPPER
Additional Feature UL RECOGNIZED
Number of Terminations 35
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case Module
Mounting Type Chassis Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Alternative Model
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