MG800J2YS50A
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 600V 800A 2900W
PDF
/
Buying Options
Total Price: USD $8.05
Unit Price: USD $8.0465
≥1 USD $8.0465
≥10 USD $6.6025
≥100 USD $6.39635
≥500 USD $6.18925
≥1000 USD $5.9831
Inventory: 1200
Minimum: 1
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Technical
Operating Temperature -20°C~150°C TJ
Published 2005
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Max Power Dissipation 2.9kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 11
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 2900W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 800A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 93nF
Turn On Time 550 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 800A
Turn Off Time-Nom (toff) 1050 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 93nF @ 10V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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