MG600Q2YS60A
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD 1200V 600A 4300W
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Inventory: 2162
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Technical
Operating Temperature -20°C~150°C TJ
Published 2002
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
Max Power Dissipation 4.3kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
Pin Count 11
JESD-30 Code R-XUFM-X11
Qualification Status Not Qualified
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 4300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 600A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 41nF
Turn On Time 500 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 600A
Turn Off Time-Nom (toff) 1400 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 41nF @ 10V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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