CP30TD1-12A
RoHS
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Package 26-DIP Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 600V 30A 114W
PDF
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Buying Options
Total Price: USD $60.83
Unit Price: USD $60.8285
≥1 USD $60.8285
≥10 USD $49.9111
≥100 USD $48.3512
≥500 USD $46.7913
≥1000 USD $45.2314
Inventory: 3560
Minimum: 1
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Technical Details
Technical
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 30A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 2.36nF
Turn On Time 130 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A
Turn Off Time-Nom (toff) 600 ns
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.36nF @ 10V
Input Three Phase Bridge Rectifier
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 114W
Case Connection ISOLATED
Configuration Three Phase Inverter with Brake
Number of Elements 7
Qualification Status Not Qualified
JESD-30 Code R-XDIP-T26
Pin Count 26
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position DUAL
Max Power Dissipation 114W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 26
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2003
Operating Temperature -20°C~150°C TJ
Compliance
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Package / Case 26-DIP Module
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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