Input Capacitance (Cies) @ Vce 6.6nF @ 10V
Gate-Emitter Voltage-Max 20V
Turn Off Time-Nom (toff) 500 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 310W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ