CM600DU-24F
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD DUAL 1200V 600A F SER
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Published 2002
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.54kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 1540W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.55V
Max Collector Current 600A
Current - Collector Cutoff (Max) 2mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 230nF
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 600A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 230nF @ 10V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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