Input Capacitance (Cies) @ Vce 110nF @ 10V
Gate-Emitter Voltage-Max 20V
Vce(on) (Max) @ Vge, Ic 1.7V @ 10V, 400A
Collector Emitter Breakdown Voltage 250V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 400A
Collector Emitter Voltage (VCEO) 1.7V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 890W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ