Input Capacitance (Cies) @ Vce 63nF @ 10V
Vce(on) (Max) @ Vge, Ic 6.5V @ 15V, 400A
Max Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 400A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Element Configuration Dual
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 1.04kW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ