Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 960W
Terminal Form UNSPECIFIED
Configuration Half Bridge
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 400A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 400A
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 110nF @ 10V