Input Capacitance (Cies) @ Vce 30nF @ 10V
Gate-Emitter Voltage-Max 20V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 300A
Collector Emitter Saturation Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 300A
Collector Emitter Voltage (VCEO) 2.25V
Max Power Dissipation 2.27kW
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ