CM200DY-24H
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE, 1.2KV, 200A - More Details
PDF
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Buying Options
Total Price: USD $73.46
Unit Price: USD $73.455144
≥1 USD $73.455144
≥10 USD $69.297302
≥100 USD $65.374815
≥500 USD $61.674352
≥1000 USD $58.183354
Inventory: 976
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 40nF @ 10V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 200A
Input Capacitance 40nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 3.4V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 1500W
Case Connection ISOLATED
Power Dissipation 1.5kW
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 1.5kW
Subcategory Insulated Gate BIP Transistors
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series IGBTMOD?
Published 1998
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 7
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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