CM200DY-12H
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE, DUAL, 600V, 200A
PDF
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Buying Options
Total Price: USD $67.74
Unit Price: USD $67.7407
≥1 USD $67.7407
≥10 USD $55.5826
≥100 USD $53.846
≥500 USD $52.10845
≥1000 USD $50.37185
Inventory: 13
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 20nF @ 10V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Turn Off Time-Nom (toff) 600 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 200A
Turn On Time 750 ns
Input Capacitance 20nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 2.8V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection ISOLATED
Power Dissipation 780W
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X5
Pin Count 7
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 780W
Subcategory Insulated Gate BIP Transistors
HTS Code 8541.29.00.95
Number of Terminations 5
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series IGBTMOD?
Published 1998
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 7
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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