CM200DU-12H
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD DUAL 600V 200A U SER
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
VCEsat-Max 3 V
Input Capacitance (Cies) @ Vce 17.6nF @ 10V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Turn Off Time-Nom (toff) 600 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 200A
Turn On Time 150 ns
Input Capacitance 17.6nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 200A
Collector Emitter Voltage (VCEO) 3V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection ISOLATED
Power Dissipation 600W
Configuration Half Bridge
Number of Elements 2
Pin Count 7
Current Rating 200A
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 650W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series IGBTMOD?
Published 2004
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 7
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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