CM150DY-28H
RoHS
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Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MOD DUAL 1400V 150A H SER
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Technical Details
Technical
Case Connection ISOLATED
Power - Max 1100W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 4.2V
Max Collector Current 150A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.4kV
Voltage - Collector Emitter Breakdown (Max) 1400V
Input Capacitance 30nF
Vce(on) (Max) @ Vge, Ic 4.2V @ 15V, 150A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 30nF @ 10V
Configuration Half Bridge
Number of Elements 2
JESD-30 Code R-XUFM-X7
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 1.1kW
Subcategory Insulated Gate BIP Transistors
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series IGBTMOD?
Published 2012
Operating Temperature -40°C~150°C TJ
Compliance
RoHS Status Non-RoHS Compliant
Physical
Transistor Element Material SILICON
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount
Alternative Model
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