Input Capacitance (Cies) @ Vce 15nF @ 10V
Gate-Emitter Voltage-Max 20V
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 150A
Max Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 1mA
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 2.25V
Configuration Half Bridge
Reach Compliance Code unknown
Max Power Dissipation 1.15kW
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ