Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 3.9kW
Terminal Form UNSPECIFIED
Configuration Half Bridge
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 1.4kA
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1400A
Collector Emitter Saturation Voltage 1.2kV
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 1400A
Turn Off Time-Nom (toff) 1300 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 220nF @ 10V