Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 5.8kW
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 1.2kA
Current - Collector Cutoff (Max) 6mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1200A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 1200A
Turn Off Time-Nom (toff) 1750 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 200nF @ 10V