Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 650W
Terminal Form UNSPECIFIED
Configuration Half Bridge
Element Configuration Dual
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance (Cies) @ Vce 23nF @ 10V
RoHS Status RoHS Compliant
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Gate-Emitter Voltage-Max 20V