CM100DY-12H
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE, DUAL, 600V, 100A
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 10nF @ 10V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 100A
Input Capacitance 10nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 2.8V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Case Connection ISOLATED
Power Dissipation 400W
Element Configuration Dual
Configuration Half Bridge
Number of Elements 2
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 400W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series IGBTMOD?
Published 1998
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 7
Package / Case Module
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
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