Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 400W
Terminal Form UNSPECIFIED
Configuration Half Bridge
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 100A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
Turn Off Time-Nom (toff) 500 ns
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 8.8nF @ 10V