Input Capacitance (Cies) @ Vce 27nF @ 10V
Gate-Emitter Voltage-Max 20V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 1mA
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 2.2V
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Configuration Half Bridge
Terminal Form UNSPECIFIED
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ