APTGV75H60T3G
RoHS
/
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 600V 100A/100A/84A/84A 32-Pin Case SP-3
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
VCEsat-Max 1.9 V
Input Capacitance (Cies) @ Vce 4.62nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type NPT, Trench Field Stop
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 75A
Turn On Time 170 ns
Input Capacitance 4.62nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Case Connection ISOLATED
Configuration Full Bridge Inverter
Number of Elements 4
JESD-30 Code R-XUFM-X25
Pin Count 25
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Min Operating Temperature -40°C
Max Operating Temperature 150°C
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 25
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Physical
Number of Pins 32
Package / Case SP3
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Alternative Model
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