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APTGV25H120BG

Microsemi Corporation
RoHS
/
Package SP4
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1.2KV 40A 20-Pin Case SP-4
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Inventory: 9260
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP4
Number of Pins 4
Transistor Element Material SILICON

Technical

Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 156W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 21
JESD-30 Code R-XUFM-X21
Operating Temperature (Max) 150°C
Number of Elements 5
Configuration Boost Chopper, Full Bridge
Case Connection ISOLATED
Power - Max 156W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 40A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 1.8nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT, Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 1.8nF @ 25V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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