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APTGT75TDU120PG

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP6
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 100A 350W SP6P
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Buying Options
Total Price: USD $588.11
Unit Price: USD $588.112242
≥1 USD $588.112242
≥200 USD $234.661182
≥500 USD $226.81923
≥1000 USD $222.944862
Inventory: 4898
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 5.34nF @ 25V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn On Time 335 ns
Input Capacitance 5.34nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 100A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 350W
Case Connection ISOLATED
Configuration Triple, Dual - Common Source
Number of Elements 6
Operating Temperature (Max) 150°C
JESD-30 Code R-XUFM-X21
Pin Count 21
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 350W
Additional Feature AVALANCHE RATED
Terminal Finish TIN SILVER COPPER
ECCN Code EAR99
Number of Terminations 21
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Published 2006

Physical

Transistor Element Material SILICON
Number of Pins 6
Package / Case SP6
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 36 Weeks

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