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APTGT75DH120T3G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1.2KV 110A 16-Pin Case SP-3
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Buying Options
Total Price: USD $217.09
Unit Price: USD $217.086702
≥1 USD $217.086702
≥200 USD $86.61989
≥500 USD $83.724946
≥1000 USD $82.295198
Inventory: 3892
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

Input Capacitance (Cies) @ Vce 5.34nF @ 25V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn On Time 335 ns
Input Capacitance 5.34nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 110A
Collector Emitter Voltage (VCEO) 1.2kV
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 357W
Case Connection ISOLATED
Element Configuration Dual
Configuration Asymmetrical Bridge
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-XUFM-X11
Pin Count 25
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 357W
ECCN Code EAR99
Number of Terminations 11
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Operating Temperature -40°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 16
Package / Case SP3
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Supply Chain

Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time 36 Weeks

Alternative Model

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