APTGT75DA120T1G
RoHS
/
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
SP1 Chassis Mount Trench Field Stop Single IGBT Module 5.34nF @ 25V 250muA 357W 610ns
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Input Capacitance (Cies) @ Vce 5.34nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 610 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Turn On Time 335 ns
Input Capacitance 5.34nF
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Current - Collector Cutoff (Max) 250μA
Max Collector Current 110A
Collector Emitter Voltage (VCEO) 2.1V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 357W
Case Connection ISOLATED
Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 12
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position UPPER
Max Power Dissipation 357W
Subcategory Insulated Gate BIP Transistors
Terminal Finish TIN SILVER COPPER
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e1
Published 2007
Operating Temperature -40°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 1
Package / Case SP1
Mounting Type Chassis Mount
Mount Chassis Mount
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