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APTGT50TL60T3G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 600V 80A 32-Pin Case SP-3
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Buying Options
Total Price: USD $214.35
Unit Price: USD $214.345367
≥1 USD $214.345367
≥200 USD $85.524932
≥500 USD $82.668061
≥1000 USD $81.255381
Inventory: 9161
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant
Radiation Hardening No

Technical

VCEsat-Max 1.9 V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor Yes
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn On Time 170 ns
Input Capacitance 3.15nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 176W
Case Connection ISOLATED
Configuration Three Level Inverter
Number of Elements 4
JESD-30 Code R-XUFM-X16
Pin Count 25
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 176W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 16
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Operating Temperature -40°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 32
Package / Case SP3
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Supply Chain

Factory Lead Time 36 Weeks

Alternative Model

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