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APTGT50TL601G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description POWER MODULE IGBT 600V 50A SP1
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Buying Options
Total Price: USD $60.83
Unit Price: USD $60.8344
≥1 USD $60.8344
≥10 USD $35.992
Inventory: 12
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

VCEsat-Max 1.9 V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
Gate-Emitter Voltage-Max 20V
NTC Thermistor No
IGBT Type Trench Field Stop
Turn Off Time-Nom (toff) 310 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn On Time 170 ns
Input Capacitance 3.15nF
Collector Emitter Breakdown Voltage 600V
Current - Collector Cutoff (Max) 250μA
Max Collector Current 80A
Collector Emitter Voltage (VCEO) 600V
Input Standard
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 176W
Case Connection ISOLATED
Configuration Three Level Inverter
Number of Elements 4
JESD-30 Code R-XUFM-X10
Pin Count 12
Terminal Form UNSPECIFIED
Terminal Position UPPER
Max Power Dissipation 176W
Subcategory Insulated Gate BIP Transistors
ECCN Code EAR99
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2012
Operating Temperature -40°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 12
Package / Case SP1
Mounting Type Chassis Mount
Mount Chassis Mount, Screw

Supply Chain

Factory Lead Time 36 Weeks

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