APTGT50DDA120T3G
RoHS 
RoHS compliant
RoHS compliantPackage SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
POWER MOD IGBT TRENCH BOOST SP3
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Buying Options
Total Price: USD $26.85
Unit Price: USD $26.84795
≥1 USD $26.84795
≥10 USD $22.02955
≥100 USD $21.3408
≥500 USD $20.653
≥1000 USD $19.96425
Inventory: 2294
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 36 Weeks
Physical
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 32
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~175°C TJ
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 270W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 25
JESD-30 Code R-XUFM-X25
Number of Elements 2
Configuration Dual Boost Chopper
Element Configuration Dual
Case Connection ISOLATED
Power - Max 270W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 75A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.6nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.6nF @ 25V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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