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APTGT400DA120D3G

Microsemi Corporation
RoHS
/
Package D-3 Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 580A 2100W D3
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Inventory: 1539
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 11

Technical

Operating Temperature -40°C~150°C TJ
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 2.1kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single
Power - Max 2100W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 580A
Current - Collector Cutoff (Max) 750μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 29nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 400A
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 29nF @ 25V
VCEsat-Max 2.1 V

Compliance

RoHS Status RoHS Compliant

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